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K521F12ACD-B060 - 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM

K521F12ACD-B060_4270493.PDF Datasheet


 Full text search : 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM


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PART Description Maker
EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存(128M的话x72位,2个等级)
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
   1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
NAND512W3A2CN6F NAND512W3A2CN6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Numonyx B.V
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
NAND512R3A2SN6F 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
Numonyx B.V
KVR400X72RC3A/1GD 1GB 128M x 72-Bit DDR400
Kingston Technology
EBE11UD8AESA-6E-E EBE11UD8AESA EBE11UD8AESA-4A-E E 1GB DDR2 SDRAM SO-DIMM (128M words x 64 bits, 2 Ranks)
ELPIDA[Elpida Memory]
K5P2880YCM Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
EBE11ED8AEFA-5C-E EBE11ED8AEFA EBE11ED8AEFA-4A-E 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
ELPIDA[Elpida Memory]
 
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K521F12ACD-B060 Collector K521F12ACD-B060 terminals description K521F12ACD-B060 13MHz K521F12ACD-B060 Lead forming K521F12ACD-B060 rectifier
 

 

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